FDB15N50【PDF 2/7 页】MOSFET N-CH 500V 15A TO-263AB

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Package Marking and Ordering Information

Device Marking

F D B 15N50

Device

FDB15N50

Package

D 2 -PAK

Reel Size

330 mm

Tape Width

24 mm

Quantity

800 units

Electrical Characteristics T J = 25 ° C unless otherwise note d.

Symbol

Parameter

Test Conditions

Min

Typ

Max

Unit

Statics

B VDSS

Drain to Source Breakdown Voltage

I D = 250μA, V GS = 0V

500

-

-

V

? B VDSS / ? T J Breakdown Voltage Temp. Coefficient

Reference to 25 o C,

I D = 1mA

-

0.58

-

V/ ° C

R DS(ON)

V GS(th)

Drain to Source On-Resistance

Gate Threshold Voltage

V GS = 10V, I D = 7.5A

V DS = V GS , I D = 250μA

-

2.0

0.33

3.4

0.38

4.0

?

V

I DSS

I GSS

Zero Gate Voltage Drain Current

Gate to Source Leakage Current

V DS = 500V

V GS = 0V

V GS = ±30V

T C = 25 o C

T C = 150 o C

-

-

-

-

-

-

25

250

±100

μA

nA

Dynamics

g fs

Q g(TOT)

Q gs

Q gd

t d(ON)

t r

t d(OFF)

t f

C ISS

C OSS

C RSS

Forward Transconductance

Total Gate Charge at 10V

Gate to Source Gate Charge

Gate to Drain “ Miller ” Charge

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

V DD = 10V, I D = 7.5A

V GS = 10V,

V DS = 400V,

I D = 15A

V DD = 250V,

I D = 15A,

R G = 6.2 ? ,

R D = 17 ?

V DS = 25V, V GS = 0V,

f = 1MHz

10

-

-

-

-

-

-

-

-

-

-

-

33

7.2

12

9

5.4

26

5

1850

230

16

-

41

10

16

-

-

-

-

-

-

S

nC

nC

nC

ns

ns

ns

ns

pF

pF

pF

Avalanche Characteristics

E AS

I AR

Single Pulse Avalanche Energy

Avalanche Current

(Note 2)

760

-

-

-

-

15

mJ

A

Drain-Source Diode Characteristics

I S

Continuous Source Current

(Body Diode)

MOSFET symbol

showing the

D

-

-

15

A

I SM

Pulsed Source Current

(Body Diode)

(Note 1)

integral reverse

p-n junction diode.

G

S

-

-

60

A

V SD

t rr

Q RR

Source to Drain Diode Voltage

Reverse Recovery Time

Reverse Recovered Charge

I SD = 15A

I SD = 15A, di SD /dt = 100A/μs

I SD = 15A, di SD /dt = 100A/μs

-

-

-

0.86

470

5

1.2

730

6.6

V

ns

μC

Notes:

1: Repetitive rating; pulse width limited by maximum junction temperature .

2: Starting T J = 25 ° C, L = 7.0mH, I AS = 15A .

?2003 Fairchild Semiconductor Corporation

FDB15N50 Rev. C1

2

www.fairchildsemi.com

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